parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -2.9 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.3 a i dm pulsed drain current ? -11 p d @t a = 25c power dissipation ? 0.96 p d @t a = 70c power dissipation ? 0.62 linear derating factor 0.008 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 6/6/01 www.irf.com 1 IRF5810 hexfet ? power mosfet parameter max. units r q ja maximum junction-to-ambient ? 130 c/w thermal resistance absolute maximum ratings w v dss r ds(on) max (m w) w) w) w) w) i d -20v 90@v gs = -4.5v -2.9a 135@v gs = -2.5v -2.3a tsop-6 these p-channel hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. this dual tsop-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. with two die per package, the IRF5810 can provide the functionality of two sot-23 packages in a smaller footprint. its unique thermal design and r ds(on) reduction enables an increase in current-handling capability. description l ultra low on-resistance l dual p-channel mosfet l surface mount l available in tape & reel l low gate charge pd -94198
IRF5810 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.011 CCC v/c reference to 25c, i d = -1ma CCC 60 90 v gs = -4.5v, i d = -2.9 ? CCC 87 135 v gs = -2.5v, i d = -2.3a ? v gs(th) gate threshold voltage -0.45 CCC -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 5.4 CCC CCC s v ds = -10v, i d = -2.9a CCC CCC -1.0 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 6.4 9.6 i d = -2.9a q gs gate-to-source charge CCC 1.2 1.8 nc v ds = -10v q gd gate-to-drain ("miller") charge CCC 1.7 2.6 v gs = -4.5v t d(on) turn-on delay time CCC 8.2 CCC v dd = -10v ? t r rise time CCC 14 CCC i d = -1.0a t d(off) turn-off delay time CCC 62 CCC r g = 6.0 w t f fall time CCC 53 CCC v gs = -4.5v c iss input capacitance CCC 650 CCC v gs = 0v c oss output capacitance CCC 110 CCC pf v ds = -16v c rss reverse transfer capacitance CCC 86 CCC ? = 1khz source-drain ratings and characteristics a -11 CCC CCC CCC -1.0 CCC s d g ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) i gss a m w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns ? surface mounted on 1 in square cu board parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.0a, v gs = 0v ? t rr reverse recovery time CCC 110 170 ns t j = 25c, i f = -1.0a q rr reverse recovery charge CCC 130 200 nc di/dt = -100a/s ?
IRF5810 www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -2.9a fig 4. normalized on-resistance vs. temperature 1.0 1.5 2.0 2.5 3.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 -i d , drain-to-source current (a ) t j = 25c t j = 150c v ds = -15v 20s pulse width 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -1.2v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v
IRF5810 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 1 10 100 0 200 400 600 800 1000 -v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 2 4 6 8 10 12 0 2 4 6 8 10 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs i = d -2.9a v = -10v ds v = -16v ds fig 7. typical source-drain diode forward voltage 0 1 10 100 -v ds , drain-tosource voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1. 4 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
IRF5810 www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
IRF5810 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 4.0 6.0 8.0 10.0 -v gs, gate -to -source voltage (v) 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r ds(on) , drain-to -source on resistance ( w ) i d = -2.9a fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 0246810 -i d , drain current (a) 0.00 0.05 0.10 0.15 0.20 0.25 r ds (on) , drain-to-source on resistance ( w ) v gs = -4.5v v gs = -2.5v
IRF5810 www.irf.com 7 fig 15. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -v gs(th) gate threshold voltage (v) i d = -250a fig 16. typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 10 20 30 40 50 60 power (w)
IRF5810 8 www.irf.com tsop-6 package outline tsop-6 part marking information d 2004 d x j 2005 1996 1997 1998 1999 2000 e f g h k y 2005 1996 1997 1998 2000 9 8 7 6 5 part number top y = year w = we e k wor k week wor k a = s i3443dv part number code reference: 25 y 51 y 26 z b = irf 5800 c = irf 5850 d = irf 5851 e = irf 5852 j = irf 5806 i = irf 5805 lot code k = irf 5810 w = (1-26) if preceded by last digit of calendar year 01 02 03 04 24 w year y a 2001 1 b 2002 2 c 2003 3 d 2004 4 x 1999 0 w = (27-52) if preceded by a letter week 27 28 29 30 50 w year a 2001 a b 2002 b c 2003 c
IRF5810 www.irf.com 9 tsop-6 tape & reel information ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 6/01 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site.
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